Nonlinear Phenomena in Complex Systems, 2005, Vol.8, No.3, pp.296-301

NONLINEAR PHENOMENA IN COMPLEX SYSTEMS
An Interdisciplinary Journal

2005, Vol.8, No.3, pp.296-301

Numerical "Renaissance" Procedure of Device and Process Parameters for Integrated Circuits.
I.I. Abramov, V.A. Dobrushkin, V.A. Tsurko, and V.A. Zhuk

The original methods of numerical simulation of the basic processes and electrical characteristics of the IC devices are described. The possibilities of numerical simulation are demonstrated through the example of complete "renaissance" procedure of electrical and process parameters of VLSI complex devices, in particular, I² L-cell.
Key words: process and device simulation, I² L-cell

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