Nonlinear Phenomena in Complex Systems, 2008, Vol.11, No.3, pp.299-315

NONLINEAR PHENOMENA IN COMPLEX SYSTEMS
An Interdisciplinary Journal

2008, Vol.11, No.3, pp.299-315

Numerical Simulation of Extended Defect Engineering in Silicon by Continuum Approach.
F. Boucard and V. Zhuk

In this paper, we present the set of comprehensive mathematical models and numerical techniques to simulate the formation, evolution and interaction of point defects that determine the anomalous dopant diffusion in silicon. These models allow to simulate extended defect kinetics and transient enhanced diffusion (TED) of impurities during past implant treatment of semiconductor wafers. The numerical implementation is based on suitable combination of classical continuum methods in TCAD modeling and new algorithms introduced to solve the large sets of coupled differential equations. Several computational examples are presented and discussed.
Key words: numerical methods, finite difference scheme, point defect engineering, shallow junction, low temperature annealing

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