An Interdisciplinary Journal

2020, Vol.23, No.3, pp.342 - 356

Clustering Artificial Atoms Induced by High-Frequency Electromagnetic Radiation in Graphene Monolayers of Multiwalled Carbon Nanotubes
H. V. Grushevskaya, A. I. Timoshchenko, E. A. Avdanina, and I. V. Lipnevich

A graphene-charge carrier confinement induced by high-frequency photons and a subsequent clustering of artificial atoms in graphene plane have been studied using electrophysical and Raman-spectroscopy methods. To fabricate the graphene n-p-n junctions, commensurable superlattice structures consisting of multi-walled carbon nanotubes (MWCNTs) have been formed utilizing a Langmuir-Blodgett technique. It has been shown that the p-n graphene junctions are sensitive to graphene lattice-deformation defects only. The levels of graphene defect do not host impurity electrons. One offers a mechanism of graphene monolayer self-repairing after a radiation damage. This mechanism is based on an existence of topologically protected Compton scatterers in graphene plane.

Key words: radiation-induced graphene p-n junction, Majorana-like fermion charge carriers carbon nanotube


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