An Interdisciplinary Journal

2004, Vol.7, No.2, pp.186-191

Simulation of Silicon Diffusion in GaAs
A.M. Saad, A.K. Fedotov, O.I. Velichko, V.I. Pachynin, and A.V. Davydko

Simulation of coupled diffusion of silicon atoms and point defects in GaAs has been carried out for two different doping conditions.Amphoteric behavior of silicon atoms in GaAs has been taken into account in simulation of high concentration diffusion from an encapsulated silicon layer, whereas a segregation of silicon in the vicinity of the interface during annealing of ion-implanted GaAs has been explained in view of transient enhanced diffusion. The calculated dopant profiles agree well with experimental ones and it confirms the adequacy of the model of silicon diffusion. Comparison with experimental data has enabled us to obtain the values of silicon intrinsic diffusivity and other parameters describing silicon diffusion in GaAs.
Key words: silicon diffusion, GaAs, vacancy, silicon diffusivity

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