2004, Vol.7, No.3, pp.273-282
Dynamic characteristics of InGaAsP/InP (1.3 -
and GaN-based (blue spectral region) laser diodes (LDs)
are theoretically studied using a set of rate equations which
includes contributions due both to lasing and cavity trapped
amplified luminescence (CTAL). The spectral properties of the
lasing and CTAL flux densities are also taken into consideration.
The LD simulation model developed here reveals new features in the
laser diode dynamics. The role of the amplified luminescence in
the transient processes is analysed.
Key words: laser diodes, amplified luminescence, dynamics
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