An Interdisciplinary Journal

2004, Vol.7, No.3, pp.273-282

The Effect of Cavity Trapped Amplified Luminescence on the Dynamics of Laser Diodes.
L.I. Burov, V.A. Savva, S.G. Rusov, A.G. Ryabtsev, G.I. Ryabtsev, A.S. Smal, K.A.Shore

Dynamic characteristics of InGaAsP/InP (1.3 - 1.55 ) and GaN-based (blue spectral region) laser diodes (LDs) are theoretically studied using a set of rate equations which includes contributions due both to lasing and cavity trapped amplified luminescence (CTAL). The spectral properties of the lasing and CTAL flux densities are also taken into consideration. The LD simulation model developed here reveals new features in the laser diode dynamics. The role of the amplified luminescence in the transient processes is analysed.
Key words: laser diodes, amplified luminescence, dynamics

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