2010, Vol.13, No.4, pp.389-395
A model of the diffusion of dopant atoms implanted in
silicon is presented. The model is based on the creation and
migration of dopant-vacancy and dopant-self interstitial complexes.
It accounts process nonlinearity and influence of non-uniform
defects distribution as well as electric field and elastic stress on
the migration of atoms. The finite-difference method is applied to
numerical approximation of the obtained system of nonlinear
equations. Estimate of accuracy is obtained. Numerical simulation
results are in a reasonable agreement with experimental data. The
proposed method enables to predict observable experimentally "kink
and tail" profile shapes, the "uphill" diffusion and local maxima
formation at a crystal surface.
Key words:
ion implantation, rapid thermal annealing, diffusion,
mathematical model, finite-difference method
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